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- W2107342019 abstract "A new buried grid fabrication technology based upon preferential etching and planar epitaxial refill techniques is described. This technology produces buried grids with a rectangular cross-section. The resulting improvement in the aspect ratio of the channel between the grids allows the fabrication of large area, high voltage, vertical channel field effect transistors and field controlled thyristors with very high blocking gains." @default.
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- W2107342019 date "1980-12-01" @default.
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- W2107342019 title "A novel buried grid device fabrication technology" @default.
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- W2107342019 doi "https://doi.org/10.1109/edl.1980.25309" @default.
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