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- W2107535449 abstract "We present full-scale calculations of highly p-type doped siGe heterojunction internal photoemission (Hip) detectors that operate in the mid-infrared (3- to 5-?m) range of wavelength. We explore the effects of including undoped spacer layers within the highly doped siGe wells, for which a systematic body of experimental data is available to us, and which demonstrates a substantial reduction in the dark current produced by these devices. We model the doping explicitly by means of a screened Coulomb potential, leading to a full description of the resultant impurity band, and compare our calculated optical line shapes with recent state-of-the-art molecular-beam epitaxy experiments. The variation of the optical response with well width, germanium concentration, spacer width and position, and doping concentration are all considered." @default.
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- W2107535449 date "2001-12-01" @default.
- W2107535449 modified "2023-09-27" @default.
- W2107535449 title "Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications" @default.
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- W2107535449 doi "https://doi.org/10.1117/1.1416695" @default.
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