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- W2107535698 abstract "ABSTRACT The atomic layer deposition of HfO 2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethylamido)hafnium (TDMAH) and H 2 O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different pre-deposition treatments involving an HF and a NH 4 OH wet chemical etch that has been shown to remove most of the Ga and As native oxides. Spectroscopic ellipsometry (SE) confirms linear growth rates of 1.05±0.05 Å/cycle for all surfaces. Rutherford backscattering spectrometry (RBS) shows that steady-state growth of 2.6×10 14 Hf/cm 2 /cycle is reached after 10 ALD cycles for the HF-etched GaAs surface. X-ray photoelectron spectroscopy (XPS) indicates the presence of native oxides on both GaAs starting surfaces after 10 cycles due to postdeposition surface oxidation. However, the presence of the native oxide is not detected for thicker 15 and 20 cycle samples indicating passivation of the surface and suppression of the interfacial layer formation." @default.
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- W2107535698 date "2008-01-01" @default.
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- W2107535698 title "Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates" @default.
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- W2107535698 doi "https://doi.org/10.1557/proc-1073-h04-19" @default.
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