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- W2107908206 abstract "Graphene, one of the most important two dimensional (2D) materials, has been attracting increasing interest and new applications in nano-scale electronic and photonic applications. The zero bandgap of graphene, however, has restricted its use in some optoelectronic applications. Recently, transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become a noteworthy complimentary material to graphene sharing many of its properties [1]. They may however offer properties that are unattainable in graphene since TMDCs offer tuneability through both composition and number of layers, allowing a bandgap transition from indirect to, with the single layer, direct. The use of chalcogenide thin films such as CuInGaSe2 and CdTe in solar cells have been commercialized but the search for low cost, low toxicity and earth abundant high efficiency absorbing materials remains under investigation. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties. In addition, TMDCs are now emerging in the thin film photovoltaic [2] and photo-catalyst [3] applications. Chemical vapour deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. Here we report our recent developments in CVD technology for Sn-S and 2D TMDCs materials, in particularly MoS2 and WS2. These chalcogenide thin films have been deposited by CVD onto various substrates at room temperature then annealed at different temperatures with the aim of optimizing the properties of the thin films to achieve the required phase. These annealed thin films were further characterized with SEM, TEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these CVD-grown chalcogenide thin films show great promise for energy applications." @default.
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- W2107908206 date "2015-06-27" @default.
- W2107908206 modified "2023-09-27" @default.
- W2107908206 title "Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD" @default.
- W2107908206 hasPublicationYear "2015" @default.
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