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- W2107908979 abstract "Ga-doped ZnO thin films have been obtained by thermal oxidation of electron beam evaporated metallic Zn100–xGax thin films. The structural, optical, and electrical resistivity of the oxidized films depend on Ga content. The value of oxidation temperature shifts to higher temperatures with increasing Ga content. After oxidation, polycrystalline ZnO phase is formed and no Ga2O3 peaks are found. The Ga content is found to affect transmittance strongly and the optical bandgap slightly. The optical bandgap values of the oxidized Ga-doped films are comparable at higher oxidation temperatures. Depending on the Ga content, the electrical resistivity increases with increasing oxidation temperature. At 550 °C all the Ga-doped films have electrical resistivity values around 105 Ω cm. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2107908979 date "2005-08-01" @default.
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- W2107908979 title "Structural and electro-optical characteristics of Ga-doped ZnO films prepared by thermal oxidation of metallic Zn100-xGax films" @default.
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- W2107908979 doi "https://doi.org/10.1002/pssa.200520056" @default.
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