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• W2107945561 abstract "Electrical, optical, and structural properties of indium zinc oxide (IZO) films grown by a box cathode sputtering (BCS) were investigated as a function of oxygen flow ratio. A sheet resistance of , average transmittance above 88% in visible range, and root-mean-square roughness of were obtained even in the IZO layers grown at room temperature. The top-emitting organic light-emitting diodes (TOLEDs) with the IZO top cathode layer were prepared and their electrical properties compared with TOLEDs with Mg-Ag/indium tin oxide (ITO) cathode layer and TOLEDs with only thermally evaporated Mg-Ag cathode layer. In addition, the effects of oxygen flow ratio in IZO films are investigated, based on X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet/visible (UV/VIS) spectrometer, scanning electron microscopy (SEM), and atomic force microscopy (AFM) analysis results." @default.
• W2107945561 created "2016-06-24" @default.
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• W2107945561 date "2006-01-01" @default.
• W2107945561 modified "2023-10-17" @default.
• W2107945561 title "Characteristics of Indium Zinc Oxide Top Cathode Layers Grown by Box Cathode Sputtering for Top-Emitting Organic Light-Emitting Diodes" @default.
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• W2107945561 doi "https://doi.org/10.1149/1.2139953" @default.
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