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• W2107947809 abstract "Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright © 2014 John Wiley & Sons, Ltd." @default.
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• W2107947809 date "2014-05-05" @default.
• W2107947809 modified "2023-10-03" @default.
• W2107947809 title "Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells" @default.
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• W2107947809 doi "https://doi.org/10.1002/pip.2504" @default.
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