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- W2108138410 abstract "The on-current decrease phenomenon is observed after erasing operation in the silicon-oxide-nitride-oxide-silicon thin-film transistors (TFTs) with lightly doped drain (LDD) structure. As nonvolatile memory, when the TFT is programmed again, the on-current decrease phenomenon can be recovered. The on-current decrease and recovery are explained by the energy band diagrams at different drain biases. The explanation implies that this phenomenon only appears in the device with LDD structure, but not in the device without LDD structure, which is experimentally verified." @default.
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- W2108138410 date "2011-08-01" @default.
- W2108138410 modified "2023-10-05" @default.
- W2108138410 title "On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure" @default.
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- W2108138410 doi "https://doi.org/10.1109/led.2011.2158182" @default.
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