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• W2108148640 abstract "2-D simulations were performed to compare the drive currents of In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned contact metallization and those with non-self-aligned contact metallization in order to determine the importance of self-aligned contact metallization in InGaAs MOSFETs at advanced technology nodes. A gate length of 15 nm was simulated, and various gap sizes between the via and the gate and various contact resistivities between the contact and the source/drain (S/D) were investigated. While very small gap sizes can significantly lower the S/D resistance for non-self-aligned contact metallization by bringing the via very close to the gate, an important benefit is still provided by self-aligned contact metallization in terms of contact area, allowing self-aligned contact metallization to outperform non-self-aligned contact metallization for the same contact resistivity, down to very low contact resistivity in the order of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-9</sup> Ω·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ." @default.
• W2108148640 created "2016-06-24" @default.
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• W2108148640 date "2014-03-01" @default.
• W2108148640 modified "2023-09-23" @default.
• W2108148640 title "Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study" @default.
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• W2108148640 doi "https://doi.org/10.1109/ted.2013.2297737" @default.
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