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• W2108155094 abstract "In this paper it is unambiguously shown that integrated power transistors benefit from mobility enhancement due to strained silicon, an effect that is usually only reported for deep submicron CMOS. Experimental validation is done by μ-Raman spectroscopy (μRS) measurements on transistor cross-sections. The silicon stress is measured to be in the order of several hundreds of MPa, yielding a reduction in drift resistance (Ron) that depends on the trench spacing, and is maximum 25%. The paper highlights experimental μRS results and defect decorated cross-sections, as well as a thorough theoretical analysis of mobility enhancement as a function of layout parameters" @default.
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• W2108155094 date "2008-05-01" @default.
• W2108155094 modified "2023-10-03" @default.
• W2108155094 title "μ-Raman Validated Stress-Enhanced Mobility in XtreMOS Transistors" @default.
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• W2108155094 doi "https://doi.org/10.1109/ispsd.2008.4538903" @default.
• W2108155094 hasPublicationYear "2008" @default.
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