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• W2108173888 abstract "This letter describes an improved formula for the extraction of the polysilicon doping from the C-V characteristic of MOS transistors. Analytical approximations are presented for the inversion layer contribution, which was neglected in previous work. The new approach returns an estimate error smaller than 10% when the full substrate and poly quantization are accounted for. Practical application to experimental data is also addressed." @default.
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• W2108173888 date "2001-06-01" @default.
• W2108173888 modified "2023-10-18" @default.
• W2108173888 title "An improved formula for the determination of the polysilicon doping" @default.
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• W2108173888 doi "https://doi.org/10.1109/55.924842" @default.
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