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• W2108233417 abstract "Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly showing a [110] orientation. Thin AlN films were grown under different process conditions in a physical vapor deposition (PVD) system to attain highly textured polycrystalline films as well as close to amorphous films. MIS and MIM structures were fabricated and electrical properties such as the dielectric constant, leakage current, and high-frequency behavior were investigated. It is found that the dielectric constant is 10 and does not change with the crystallinity of the films. High-frequency measurements up to 10 GHz show no frequency dispersion of the capacitance. The leakage current stays relatively constant between films and is believed to be Poole-Frenkel controlled. Capacitance-voltage (C-V) measurements for MIS structures revealed the presence of charges in the interface layer between the substrate and the dielectric film. The temperature dependence of the capacitance has also been studied." @default.
• W2108233417 created "2016-06-24" @default.
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• W2108233417 date "2003-05-01" @default.
• W2108233417 modified "2023-09-26" @default.
• W2108233417 title "Electrical characterization of aln mis and mim structures" @default.
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• W2108233417 doi "https://doi.org/10.1109/ted.2003.813231" @default.
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