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- W2108236178 abstract "We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric pressure MOVPE. Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic respectively. To investigate the incorporation behaviour of nitrogen in GaAsN and InGaAsN layers as function of ambient gas in the reactor, the growth was performed under H/sub 2/ and N/sub 2/ gases. Good structural quality and surface morphology have been obtained with both gases. Furthermore, with N/sub 2/ ambient gas an enhancement of indium and nitrogen incorporation have been observed. The nonradiative carrier lifetime is about 25 ns independent of ambient gas. This value is good enough for laser applications." @default.
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- W2108236178 date "2002-11-27" @default.
- W2108236178 modified "2023-09-26" @default.
- W2108236178 title "High quality InGaAsN growth by MOVPE using N/sub 2/ carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors" @default.
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- W2108236178 doi "https://doi.org/10.1109/iciprm.1998.712471" @default.
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