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• W2108334557 abstract "This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body currents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes." @default.
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• W2108334557 date "2009-01-01" @default.
• W2108334557 modified "2023-09-30" @default.
• W2108334557 title "PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations" @default.
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• W2108334557 doi "https://doi.org/10.1016/j.sse.2008.09.009" @default.
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