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• W2108342927 abstract "The influence of field plates and surface traps on silicon carbide MESFETs for microwave operation was investigated. By increasing the length of gate-connected field plates from 50 to 800 nm, it was possible to increase the gate-drain breakdown voltage of the devices from 125 to 170 V. At the same time, the current slump effect of traps in the passivation oxide was reduced. By using a combination of field plates and a passivation oxide with low interface trap density, it was possible to reach an output power density of 8 W/mm at 3 GHz." @default.
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• W2108342927 date "2008-08-01" @default.
• W2108342927 modified "2023-10-16" @default.
• W2108342927 title "Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs" @default.
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• W2108342927 doi "https://doi.org/10.1109/ted.2008.926633" @default.
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