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- W2108372616 abstract "X-ray triple-crystal diffractometry (TCD) of parallel (+n, -n, +n) setting was used to investigate the structural changes of silicon surface layers after arsenic implantation and pulsed laser irradiation. The implated layers of different doses show enlarged lattice constants in the disturbed crystalline parts. After low energy annealing a polycrystalline surface layer is built up from the amorphous layer while the crystalline layer below it is not significantly changed. High energy annealed regions show recrystallisation with high degree of perfection and decreased lattice constant. The results of TCD measurements are compared with results of double-crystal diffractometer investigations and advantages of the TCD method are discussed. Die Röntgen-Dreikristalldiffraktometrie in paralleler (+n, -n, +n)-Anordnung wurde zur Untersuchung von strukturellen Veränderungen von Siliziumoberflächen nach Arsenimplantation und Impulslaserbestrahlung verwendet. Implantierte Schichten mit unterschiedlichen As-Dosen zeigen eine vergrößerte Gitterkonstante in den gestörten kristallinen Teilen. Nach Ausheilung mit geringer Energie bilden sich aus amorphen polykristalline Oberflächenschichten während die kristalline Schicht darunter nicht wesentlich verändert wird. Gebiete, die bei hoher Energie ausgeheilt werden, zeigen eine Rekristallisation mit hohem Perfektionsgrad und verringerter Gitterkonstante. Die Ergebnisse der 3-KD-Messungen werden mit solchen von Zweikristalldiffraktometeruntersuchungen verglichen, und Vorteile der 3-KD-Methode werden diskutiert." @default.
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- W2108372616 date "1984-01-01" @default.
- W2108372616 modified "2023-10-09" @default.
- W2108372616 title "X-ray triple-crystal diffractometer investigation of arsenic implanted silicon after pulsed laser irradiation" @default.
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- W2108372616 doi "https://doi.org/10.1002/crat.2170190511" @default.
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