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• W2108449237 abstract "We investigated the effect of growth parameters, growth temperature, growth rate and solvent, on crystal quality of silicon thin layers grown by LPE method. Electrical and structural properties were examined by means of minority-carrier lifetime measurement and micro-Raman scattering spectroscopy. It was made clear that crystal quality strongly depends on the growth temperature mainly due to equilibrium impurity solubility in the silicon layers. In addition, it is important to choose an appropriate solvent whose solubility in crystalline silicon is low and effective capture cross section is small. In actual, we successfully grew the silicon layer of which the lifetime was higher than that of monocrystalline silicon crystal as a substrate." @default.
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• W2108449237 date "2003-05-18" @default.
• W2108449237 modified "2023-09-26" @default.
• W2108449237 title "What is the most important growth parameter on crystal quality of the silicon layer by LPE method" @default.
• W2108449237 hasPublicationYear "2003" @default.
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