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• W2108451895 abstract "Positive charging of thermal SiO2 layers on (1 0 0)Si and (0 0 0 1)6H–, 4H–SiC related to trapping of protons is studied using low-energy proton implantation into the oxide, and compared to the trapping of holes generated by 10-eV photons. Proton trapping has an initial probability close to 100% and shows little sensitivity to the annealing-induced oxygen deficiency of SiO2. In contrast to protons, hole trapping in as-grown SiO2 shows a much lower efficiency which increases upon oxide annealing, in qualitative correlation with the higher density of O3Si• defects (E’ centers) detected by electron spin resonance after hole injection. Despite these differences, the neutralization of positive charges induced by holes and protons has the same cross-section, and in both cases is accompanied by liberation of atomic H suggesting that protons account for positive charge in both cases. The rupture of Si–O bonds in the oxide observed upon proton injection suggests, as a first basic step, the bonding of a proton to a bridging oxygen atom in SiO2 network." @default.
• W2108451895 created "2016-06-24" @default.
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• W2108451895 date "2002-11-01" @default.
• W2108451895 modified "2023-10-18" @default.
• W2108451895 title "Proton trapping in SiO2 layers thermally grown on Si and SiC" @default.
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• W2108451895 doi "https://doi.org/10.1016/s0038-1101(02)00155-7" @default.
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