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- W2108458939 abstract "The planarity and metal-field Vt of PECVD TEOS BPSG were studied on an 0.8 micron technology CMOS EPROM structure. Film planarity was found to depend, primarily on boron concentration for any given thickness. A correlation between boron concentration, flow angle over an isolated poly lead and planarity in the array is established. Array planarity was found to improve with thickness. However, no noticeable difference in planarity was observed between a 7.5 kA film and a 9 kA film. Perfect array planarity is demonstrated. A correlation between film thickness and contact aspect ratio is also presented. A correlation between film oxide charge as measured by surface charge analysis and metal-field Vt is established. The n-channel field Vt decreased with increase in oxide charge, which indicates the charge is positive. The charge is concluded to be restricted to the BPSG layer. >" @default.
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- W2108458939 date "2002-12-09" @default.
- W2108458939 modified "2023-09-25" @default.
- W2108458939 title "A characterization of PECVD TEOS BPSG planarity and metal-field Vt on a submicron CMOS EPROM" @default.
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- W2108458939 doi "https://doi.org/10.1109/vmic.1991.153028" @default.
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