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- W2108485420 abstract "We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Ge nMOSFETs have achieved high electron mobility of 804 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs with maintaining low junction leakage current of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and high I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> ratio of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> ." @default.
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- W2108485420 date "2009-12-01" @default.
- W2108485420 modified "2023-10-14" @default.
- W2108485420 title "High performance GeO<inf>2</inf>/Ge nMOSFETs with source/drain junctions formed by gas phase doping" @default.
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- W2108485420 doi "https://doi.org/10.1109/iedm.2009.5424248" @default.
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