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- W2108530168 abstract "The reliability and electrical properties for PECVD a-SiN/sub x/:H films with an optical band-gap ranging from 2.5 to 5.38 eV have been investigated. The observed changes in the electrical characteristics are reviewed in terms of changes in the chemical and physical behaviour of the metastable Si dangling bonds. We found evidence that the degradation mechanism for our films is similar to that of a-SiN/sub x/:H with a band-gap 1.2 were all shown to fulfil both the lifetime and leakage current requirements for application in passive RF networks." @default.
- W2108530168 created "2016-06-24" @default.
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- W2108530168 date "2003-12-22" @default.
- W2108530168 modified "2023-09-24" @default.
- W2108530168 title "Reliability and electric properties for PECVD a-SiN/sub x/:H films with an optical band-gap ranging from 2.5 to 5.38 eV" @default.
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- W2108530168 doi "https://doi.org/10.1109/relphy.2003.1197760" @default.
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