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• W2108763968 abstract "The forming process, which corresponds to the activation of the switching filament in Resistive Random Access Memory (RRAM) arrays, has a strong impact on the cells’ performances. In this paper we characterize and compare different pulse forming techniques in terms of forming time, yield and cell-to-cell variability on 4 kbits RRAM arrays. Moreover, post-forming modeling during Reset operation of correctly working and over formed cells has been performed. An incremental form and verify technique, based on a sequence of trapezoidal waveforms with increasing voltages followed by a verify operation that terminates when the expected switching behavior has been achieved, showed the best results. This procedure narrows the post-forming current distribution whereas reducing the Reset switching voltage and the operative current. These advantages materialize in a better control of the cell-to-cell variability and in an overall time and energy saving at the system level." @default.
• W2108763968 created "2016-06-24" @default.
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• W2108763968 date "2016-01-01" @default.
• W2108763968 modified "2023-10-02" @default.
• W2108763968 title "Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays" @default.
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• W2108763968 doi "https://doi.org/10.1016/j.sse.2015.10.003" @default.
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