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- W2108784924 abstract "This paper reports on a process to fabricate a single crystal 3C-SiC on SiO/sub 2/ structure using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces to transfer a 3C-SiC film grown on a Si wafer to a SiO/sub 2/ film grown on a Si wafer. 3C-SiC films grown on the 3C-SiC on SiO/sub 2/ structure have a much lower defect density than conventional 3C-SiC on Si films." @default.
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- W2108784924 date "2002-11-22" @default.
- W2108784924 modified "2023-09-24" @default.
- W2108784924 title "A novel SiC on insulator technology using wafer bonding" @default.
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- W2108784924 doi "https://doi.org/10.1109/sensor.1997.613736" @default.
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