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• W2108830266 abstract "We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant anneal temperature and ambient; ii) oxidation procedure; iii) postoxidation annealing in nitric oxide (NO); iv) type of gate material, and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs." @default.
• W2108830266 created "2016-06-24" @default.
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• W2108830266 date "2003-07-01" @default.
• W2108830266 modified "2023-10-17" @default.
• W2108830266 title "Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface" @default.
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• W2108830266 doi "https://doi.org/10.1109/ted.2003.814974" @default.
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