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- W2109043515 abstract "The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD's), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural design rules for decreasing ionizing radiation sensitivity are presented. The increased total ionizing dose tolerance of CCD's fabricated with a radiation hard oxide is described. Liquid nitrogen temperature irradiation effects in CCD's are discussed." @default.
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- W2109043515 date "1980-01-01" @default.
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- W2109043515 title "Radiation effects in silicon charge-coupled devices" @default.
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- W2109043515 doi "https://doi.org/10.1007/3-540-09832-1_6" @default.
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