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• W2109055525 abstract "The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher V/sub gs/ stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation." @default.
• W2109055525 created "2016-06-24" @default.
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• W2109055525 date "2005-08-16" @default.
• W2109055525 modified "2023-10-17" @default.
• W2109055525 title "Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide" @default.
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• W2109055525 doi "https://doi.org/10.1109/relphy.2005.1493148" @default.
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