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- W2109184473 abstract "Abstract Low‐layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni‐catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni‐catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance ( R sheet ) of approximately 1435 Ω per □, a contact resistance ( R c ) of about 127 Ω, and a specific contact resistance ( R sc ) of approximately 2.8×10 −4 Ω cm 2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage ( I ds – V ds ) plot clearly indicates a p ‐conducting characteristic of the synthesized graphene. Gas‐sensor measurements revealed a high sensor activity of the low‐layer graphene material towards H 2 and CO. At 300 °C, a sensor response of approximately 29 towards low H 2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported." @default.
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- W2109184473 date "2012-10-02" @default.
- W2109184473 modified "2023-10-18" @default.
- W2109184473 title "Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H<sub>2</sub>and CO of Transparent, Large-Area, Low-Layer Graphene" @default.
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- W2109184473 doi "https://doi.org/10.1002/chem.201201880" @default.
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