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• W2109206407 abstract "We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 times 2.5 times 4-mum <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/degC over the temperature range of 700 mK-300 K." @default.
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• W2109206407 date "2009-05-01" @default.
• W2109206407 modified "2023-09-26" @default.
• W2109206407 title "Sub-1-K Operation of SiGe Transistors and Circuits" @default.
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• W2109206407 doi "https://doi.org/10.1109/led.2009.2016767" @default.
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