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- W2109305874 abstract "Sulphur passivation effects on the performance of LPE-grown GaSb/InGaAsSb/AlGaAsSb photodiodes designed for TPV applications have been monitored within the period of 3 years. The applicability of (NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> ) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> S, Na <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> S, and (NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> CS solutions have been compared by measuring of electro-optical characteristics (I-V, R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Gamma</sub> lambda, eta-lambda) and investigating surface properties (X-ray photoelectron spectroscopy and variable angle spectroscopic ellipsometry). We show that electrochemical passivation enables to reduce photodiodes dark current, to increase their differential resistance by a factor of 4 and detectivity up to 2 times 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>10</sup> cmHz <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1/2</sup> W <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sup> and assures long-term stability of passivated surfaces." @default.
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- W2109305874 date "2007-05-01" @default.
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- W2109305874 title "Long-term stability of GaSb/In(Al)GaAsSb thermophotovoltaic cells passivated by electrochemical treatment in sulphur containing solutions" @default.
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- W2109305874 doi "https://doi.org/10.1109/iccep.2007.384239" @default.
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