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- W2109373407 abstract "In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200°C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800°C. A crystalline fraction of 50% was obtained for the sample deposited at 1700°C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%)." @default.
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- W2109373407 date "2001-02-01" @default.
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- W2109373407 title "Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD" @default.
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- W2109373407 doi "https://doi.org/10.1016/s0040-6090(00)01615-1" @default.
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