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- W2109474008 abstract "We demonstrate an abrupt and box-shaped n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /p-junction diodes at 400degC-600degC, based on the in situ doping technique. Excellent diode characteristics having a 1.1 times 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> on/off ratio and a high forward current density (120 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 1 V) are obtained in an n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /p diode at 600-C in situ doping." @default.
- W2109474008 created "2016-06-24" @default.
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- W2109474008 date "2009-09-01" @default.
- W2109474008 modified "2023-10-14" @default.
- W2109474008 title "Germanium <i>In Situ</i> Doped Epitaxial Growth on Si for High-Performance $hbox{n}^{+}/hbox{p}$-Junction Diode" @default.
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- W2109474008 doi "https://doi.org/10.1109/led.2009.2027823" @default.
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