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• W2109570231 abstract "Abstract The intermediates of thermal decomposition of 1,3-disilabutane (SiH 3 CH 2 SiH 2 CH 3 , DSB) to form SiC on Si(1 0 0) surface were in situ investigated by reactive ion scattering (RIS), temperature programmed reactive ion scattering (TPRIS), temperature programmed desorption (TPD), and auger electron spectroscopy (AES). DSB as a single molecular precursor was exposed on Si(1 0 0) surface at a low temperature less than 100 K, and then the substrate was heated up to 1000 K. RIS, TPD, and AES investigations showed that DSB adsorbed molecularly and decomposed to SiC via some intermediates on Si(1 0 0) surface as substrate temperature increasing. Between 117 and 150 K molecularly adsorbed DSB desorbed partially and decomposed to CH 4 Si 2 , which is the first observation on Si(1 0 0) surface, and further decomposed to CH 4 Si between 150 and 900 K. CH 4 Si lost hydrogen and formed SiC over 900 K." @default.
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• W2109570231 date "2012-01-01" @default.
• W2109570231 modified "2023-10-08" @default.
• W2109570231 title "In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(100) surface" @default.
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• W2109570231 doi "https://doi.org/10.1016/j.apsusc.2011.02.036" @default.
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