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- W2109601889 abstract "High-capacitance bilayer dielectrics based on atomic-layer-deposited HfO2 and spin-cast epoxy are used with networks of single-walled carbon nanotubes (SWNTs) to enable low-voltage, hysteresis-free, and high-performance thin-film transistors (TFTs) on silicon and flexible plastic substrates. These HfO2–epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm–2), and low leakage current (ca. 10–8 A cm–2); their low-temperature (ca. 150 °C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge-transfer doping of SWNTs is also demonstrated through the fabrication of n-channel SWNT TFTs, low-voltage p–n diodes, and complementary logic gates." @default.
- W2109601889 created "2016-06-24" @default.
- W2109601889 creator A5043049997 @default.
- W2109601889 creator A5045551635 @default.
- W2109601889 creator A5086459524 @default.
- W2109601889 creator A5090724934 @default.
- W2109601889 date "2006-12-04" @default.
- W2109601889 modified "2023-09-28" @default.
- W2109601889 title "Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates" @default.
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- W2109601889 doi "https://doi.org/10.1002/adfm.200600539" @default.
- W2109601889 hasPublicationYear "2006" @default.
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