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- W2109653550 abstract "We present results of pulsed Raman and phonon-induced luminescence experiments on a mixed amorphous-nanocrystalline silicon system $(aensuremath{-}mathrm{nc}ensuremath{-}mathrm{S}mathrm{i}:mathrm{H}).$ With these experiments, the decay and transport of nonequilibrium phonons in $aensuremath{-}mathrm{nc}ensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ was examined and compared with the behavior of phonons of the same frequencies in $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ and $censuremath{-}mathrm{Si}.$ From the Raman measurements, we find that in the spectral region of the TO vibrations in the crystallites $(505--520 {mathrm{cm}}^{ensuremath{-}1}),$ phonons have shorter decay times than the TO phonons in $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H},$ but longer than in $censuremath{-}mathrm{Si}.$ In addition, the lifetimes increase with decreasing frequency, from less than 10 ns at $515 {mathrm{cm}}^{ensuremath{-}1}$ to $ensuremath{sim}30 mathrm{ns}$ at $505 {mathrm{cm}}^{ensuremath{-}1}.$ We further show that phonons with a frequency of $ensuremath{sim}150 {mathrm{cm}}^{ensuremath{-}1}$ in $aensuremath{-}mathrm{nc}ensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ have longer lifetimes than in $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H} (ensuremath{tau}<10 mathrm{ns}).$ Finally, the diffusion of $29ensuremath{-}{mathrm{cm}}^{ensuremath{-}1}$ phonons through the $aensuremath{-}mathrm{nc}ensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ and $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ material was examined in phonon-induced luminescence experiments. Transport through the $aensuremath{-}mathrm{nc}ensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ film appears to be much slower than through the $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ layer. We explain these results as effects of phonon confinement, and relate them to the extremely long phonon lifetimes found in Raman experiments on $aensuremath{-}mathrm{Si}(:mathrm{H}).$" @default.
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- W2109653550 date "2001-06-21" @default.
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- W2109653550 title "Dynamics of vibrations in a mixed amorphous-nanocrystalline Si system" @default.
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- W2109653550 doi "https://doi.org/10.1103/physrevb.64.045203" @default.
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