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• W2109688007 abstract "In this study, we investigated the influence of atomic step morphologies of 4H-SiC surfaces on the distribution of threading edge and screw dislocations in GaN films grown by MOCVD. Electron channeling contrast imaging (ECCI) was implemented to profile engineered 4H-SiC mesas. Two types of atomic morphologies were consistently observed at these mesa surfaces. Mesa surfaces with no screw dislocations exhibited purely atomic step-free surfaces except within 2-20 mum of the mesa edges. Mesas penetrated by at least one screw dislocation exhibited a uniform though highly stepped atomic surface across the entire mesa." @default.
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• W2109688007 date "2007-12-01" @default.
• W2109688007 modified "2023-10-03" @default.
• W2109688007 title "The influence of substrate atomic step morphology on threading dislocation distributions in iii-nitride films" @default.
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• W2109688007 doi "https://doi.org/10.1109/isdrs.2007.4422505" @default.
• W2109688007 hasPublicationYear "2007" @default.
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