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• W2109821714 abstract "The reliability of flash memories is strongly. limited by the stress-induced leakage current (SILC), which leads to accelerated charge-loss phenomena in a few anomalous cells. Estimating the reliability of large flash arrays requires that physically-based models for the statistical distribution of SILC are developed. In this paper, we show a physical model for the leakage mechanism in thin oxides, which is able us to explain the anomalous leakage-conduction in tail cells. The physical model is then used for a quantitative evaluation of the SILC distribution in large flash arrays. The new model can reproduce the statistics of SILC for a wide range of tunnel-oxide thickness, and can provide a straightforward estimation of the reliability for large flash arrays." @default.
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• W2109821714 date "2002-11-01" @default.
• W2109821714 modified "2023-09-23" @default.
• W2109821714 title "A statistical model for SILC in flash memories" @default.
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• W2109821714 doi "https://doi.org/10.1109/ted.2002.804730" @default.
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