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- W2110041830 abstract "The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped, well isolated, and uniformly distributed Ni NCs surrounded by NiOx (~1nm) in SiO2 gate oxide. The Ni-NiOx NCs embedded in SiO2 exhibited a large memory window of 9.8 V as well as efficient programming/erasing speed and improved retention characteristics of about 10 years. A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell layer." @default.
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- W2110041830 date "2013-07-01" @default.
- W2110041830 modified "2023-09-24" @default.
- W2110041830 title "Charge Storage Characteristics of Ni-NiO<sub>x</sub> Core-Shell Nanocrystals Embedded in SiO<sub>2</sub> Gate Oxide" @default.
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- W2110041830 doi "https://doi.org/10.4028/www.scientific.net/kem.562-565.731" @default.
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