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- W2110093460 abstract "A model for determining the critical mismatch (f*) and mismatch gradient (k*) parameters is developed. When f and k are higher than the above parameters the formation of partial misfit dislocations gets energetically preferable. A polar diagram of f* on substrate orientation and dependences of f* and k* on energy of stacking faults (γ) for the (100) orientation of interface are worked out. The values f* and k* for the heteroepitaxial system GaAs1–xPx–GaAs (100) are verified experimentally. Doping of GaAs1–xPx films with tellurium up to 1018 cm−3 results in lower f* from 7.4 × 10−3 to 2 × 10−3 that is due to lower γ in doped films compared to films non-doped or doped with Zn. The decrease of γ is to be more than 3 × 10−2 J m−2. [Russian Text Ignored]." @default.
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- W2110093460 date "1981-09-16" @default.
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- W2110093460 title "The formation of partial misfit dislocations during heteroepitaxy" @default.
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- W2110093460 doi "https://doi.org/10.1002/pssa.2210670129" @default.
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