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- W2110111764 endingPage "1241" @default.
- W2110111764 startingPage "1239" @default.
- W2110111764 abstract "We report the observation and utilization of boron segregation in trench MOSFETs (UMOS) to reduce on-resistance. A trenched LOCOS process has been applied to a UMOS structure to reduce the gate-to-source overlap capacitance ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gs</sub> ), and it is observed that not only 40% reduction in <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gs</sub> is achieved but also 45% reduction in specific on-resistance ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>R</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on,</sub> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sp</sub> ). Figure of merit is improved by 58%. TSUPREM-4 doping profile simulation at the silicon and oxide interface revealed the presence of boron segregation. On-resistance reduction is attributed by the shortened vertical channel length due to boron segregation." @default.
- W2110111764 created "2016-06-24" @default.
- W2110111764 creator A5004347227 @default.
- W2110111764 creator A5017986175 @default.
- W2110111764 creator A5019136329 @default.
- W2110111764 creator A5019838562 @default.
- W2110111764 creator A5033741101 @default.
- W2110111764 creator A5035508119 @default.
- W2110111764 creator A5050364660 @default.
- W2110111764 creator A5061382281 @default.
- W2110111764 creator A5067245695 @default.
- W2110111764 creator A5073138600 @default.
- W2110111764 creator A5076537133 @default.
- W2110111764 creator A5085982278 @default.
- W2110111764 date "2008-11-01" @default.
- W2110111764 modified "2023-10-16" @default.
- W2110111764 title "Observation and Utilization of Boron Segregation in Trench MOSFETs to Improve Figure of Merit (FOM)" @default.
- W2110111764 cites W1974722745 @default.
- W2110111764 cites W1982584359 @default.
- W2110111764 cites W2073596908 @default.
- W2110111764 cites W2134958247 @default.
- W2110111764 cites W2159580696 @default.
- W2110111764 doi "https://doi.org/10.1109/led.2008.2004971" @default.
- W2110111764 hasPublicationYear "2008" @default.
- W2110111764 type Work @default.
- W2110111764 sameAs 2110111764 @default.
- W2110111764 citedByCount "4" @default.
- W2110111764 countsByYear W21101117642012 @default.
- W2110111764 countsByYear W21101117642021 @default.
- W2110111764 crossrefType "journal-article" @default.
- W2110111764 hasAuthorship W2110111764A5004347227 @default.
- W2110111764 hasAuthorship W2110111764A5017986175 @default.
- W2110111764 hasAuthorship W2110111764A5019136329 @default.
- W2110111764 hasAuthorship W2110111764A5019838562 @default.
- W2110111764 hasAuthorship W2110111764A5033741101 @default.
- W2110111764 hasAuthorship W2110111764A5035508119 @default.
- W2110111764 hasAuthorship W2110111764A5050364660 @default.
- W2110111764 hasAuthorship W2110111764A5061382281 @default.
- W2110111764 hasAuthorship W2110111764A5067245695 @default.
- W2110111764 hasAuthorship W2110111764A5073138600 @default.
- W2110111764 hasAuthorship W2110111764A5076537133 @default.
- W2110111764 hasAuthorship W2110111764A5085982278 @default.
- W2110111764 hasConcept C121332964 @default.
- W2110111764 hasConcept C185544564 @default.
- W2110111764 hasConcept C192562407 @default.
- W2110111764 hasConcept C41008148 @default.
- W2110111764 hasConcept C501308230 @default.
- W2110111764 hasConceptScore W2110111764C121332964 @default.
- W2110111764 hasConceptScore W2110111764C185544564 @default.
- W2110111764 hasConceptScore W2110111764C192562407 @default.
- W2110111764 hasConceptScore W2110111764C41008148 @default.
- W2110111764 hasConceptScore W2110111764C501308230 @default.
- W2110111764 hasIssue "11" @default.
- W2110111764 hasLocation W21101117641 @default.
- W2110111764 hasOpenAccess W2110111764 @default.
- W2110111764 hasPrimaryLocation W21101117641 @default.
- W2110111764 hasRelatedWork W1996331863 @default.
- W2110111764 hasRelatedWork W2110960332 @default.
- W2110111764 hasRelatedWork W2156371796 @default.
- W2110111764 hasRelatedWork W2612347065 @default.
- W2110111764 hasRelatedWork W2748952813 @default.
- W2110111764 hasRelatedWork W2899084033 @default.
- W2110111764 hasRelatedWork W2979786188 @default.
- W2110111764 hasRelatedWork W3177593817 @default.
- W2110111764 hasRelatedWork W4386077360 @default.
- W2110111764 hasRelatedWork W640478473 @default.
- W2110111764 hasVolume "29" @default.
- W2110111764 isParatext "false" @default.
- W2110111764 isRetracted "false" @default.
- W2110111764 magId "2110111764" @default.
- W2110111764 workType "article" @default.