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- W2110113635 abstract "Abstract To obtain the necessary basic insight into the behaviour of MOSFET needed for device design and optimization, the basic equations must describe the two dimensional characteristics of the device. The increased power and availability of modern digital computers makes such an approach to derive most general and exact solutions feasible. A comprehensive review is made of the attempts at 2d MOSFET modeling." @default.
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- W2110113635 title "A review of two dimensional long channel mosfet modeling" @default.
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- W2110113635 doi "https://doi.org/10.1016/0026-2714(80)90387-x" @default.
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