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• W2110158719 abstract "High-performance poly (3-hexylthiophene) (P3HT) thin-film transistors array was fabricated on a plastic substrate by employing micro-contact printing process. The microcontact printing process, which uses a silicon elastomer stamp, enables the patterning of polymer layers without any photolithography process. As the gate dielectric, spun polyimide, and low-temperature ion-beam deposited silicon dioxide layers were used, forming a dual-layer structure. It is found out that the polymide layer improves the surface roughness of the dielectric and accordingly brings about enhanced device performance. Additionally, by using O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma treatment, both higher drain current and carrier mobility were obtained simultaneously. Changes in the surface states of the source-drain electrodes and the morphology of the dielectric are proposed to account for the observed improvements. Based on the experiments, we built a high-performance plastic-based P3HT transistors array including 0.02 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> V ·s in carrier mobility and on/off current ratio about 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sup> ~ 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> ." @default.
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• W2110158719 date "2002-11-01" @default.
• W2110158719 modified "2023-10-16" @default.
• W2110158719 title "High-performance polymer tfts printed on a plastic substrate" @default.
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• W2110158719 doi "https://doi.org/10.1109/ted.2002.803642" @default.
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