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• W2110199993 abstract "<para xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 <formula formulatype=inline><tex>$hbox{m}Omega cdot hbox{cm}^{2}$</tex></formula>. These values correspond to the world record of 11.3 <formula formulatype=inline><tex>$hbox{GW}/hbox{cm}^{2}$</tex></formula> for Baliga's figure-of-merit <formula formulatype=inline><tex>$(hbox{BFOM} = hbox{4}V_{rm bd}^{2}/R_{{rm on} hbox{-}{rm sp}})$</tex></formula>. </para>" @default.
• W2110199993 created "2016-06-24" @default.
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• W2110199993 date "2008-08-01" @default.
• W2110199993 modified "2023-10-05" @default.
• W2110199993 title "Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)" @default.
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• W2110199993 doi "https://doi.org/10.1109/ted.2008.926666" @default.
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