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• W2110372776 abstract "The H2O and/or O2 gettering effects of a Ga-In-Al ternary melt bubbler on the MOCVD growth of AlGaAs in a TMG-TMA-AsH3-H2 system are investigated. We described the surface morphology, the growth rate and the solid composition. When the ternary melt bubbler is not used, the surface morphology is degraded, and the growth rate ratio of AlAs and GaAs (RAlAs/RGaAs) is 0.33. On the other hand, when the bubbler is used, the surface morphology is improved significantly,RAlAs/RGaAs is 1.18, and Al is more easily incorporated into the solid. The different values ofRAlAs/RGaAs and different incorporation coefficients of Al in the literature may be due to different concentrations of H2O and O2 as well as the different growth conditions." @default.
• W2110372776 created "2016-06-24" @default.
• W2110372776 creator A5016366242 @default.
• W2110372776 creator A5085413249 @default.
• W2110372776 creator A5089200815 @default.
• W2110372776 date "1986-01-01" @default.
• W2110372776 modified "2023-09-24" @default.
• W2110372776 title "The gettering effects of Ga-In-Al ternary melt bubbler on growth rate and solid composition of MOCVD AlGaAs" @default.
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• W2110372776 doi "https://doi.org/10.1016/0022-0248(86)90244-7" @default.
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