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• W2110439630 abstract "In an effort to develop diamond field emitters with high current densities, diamond film technology compatible with Si integrated circuits is used to design new experiments for a systematic study of field emission as a function of sp/sup 3//sp/sup 2/ ratio, grain size, doping level, patterning, field enhancement at the grain tips, and anode to emitter separation. Boron-doped polycrystalline diamond films with low sp/sup 3//sp/sup 2/ ratios, high density of small grains and grain boundaries, and patterned structures result in high current densities and low emission fields. Electric fields to initiate emission, measured at J=0.01 mAcm/sup -2/, are in the range of 0.1-0.4 MV/cm depending upon diamond growth conditions. The results of this study have important consequences for diamond triode field emitter displays." @default.
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• W2110439630 date "1998-04-01" @default.
• W2110439630 modified "2023-09-26" @default.
• W2110439630 title "Technology and characterization of diamond field emitter structures" @default.
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• W2110439630 doi "https://doi.org/10.1109/16.662815" @default.
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