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- W2110578045 abstract "Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10−7." @default.
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- W2110578045 date "1995-09-15" @default.
- W2110578045 modified "2023-10-18" @default.
- W2110578045 title "Neodymium-doped GaAs light-emitting diodes" @default.
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- W2110578045 doi "https://doi.org/10.1063/1.359827" @default.
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