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• W2110588432 abstract "ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by ID-VD and ID-VG measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm2/V · s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP)." @default.
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• W2110588432 date "2008-10-01" @default.
• W2110588432 modified "2023-09-24" @default.
• W2110588432 title "Fabrication and characteristics of ZnO-based thin film transistors" @default.
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• W2110588432 doi "https://doi.org/10.1109/icsict.2008.4734708" @default.
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