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- W2110593043 abstract "The memory properties of nickel silicide (NiSi) nanocrystal (NC) layers, which were directly grown in silicon dioxide by thermal annealing of a simple sandwich structure composed of an ultrathin Ni film sandwiched between two silicon-rich oxide (SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> ) layers, have been investigated for possible nonvolatile memory (NVM) applications. Capacitance-voltage (C-V) measurements on MOS capacitors with a floating gate based on a NiSi NC layer of average diameter of 2.9 nm and areal density of 1.3 times 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> are shown to have a memory window of ~10 V, a retention time > 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> s, and an endurance > 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> program/erase cycles. These C-V characteristics demonstrate that the NiSi NC layer has high potential for NVM applications." @default.
- W2110593043 created "2016-06-24" @default.
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- W2110593043 date "2009-12-01" @default.
- W2110593043 modified "2023-10-18" @default.
- W2110593043 title "Memory Properties of Nickel Silicide Nanocrystal Layer for Possible Application to Nonvolatile Memory Devices" @default.
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- W2110593043 doi "https://doi.org/10.1109/ted.2009.2033320" @default.
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