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• W2110634041 abstract "A novel dry etching process for amorphous silicon (a-Si) and tungsten (W) for chemical vapor deposition (CVD) chamber cleaning has been performed by electron cyclotron resonance (ECR) O 2 plasma employing a solid-material evaporation system where fluorocarbon species are produced from fluorinated ethylene propylene (FEP) by CO 2 laser evaporation for preventing global warming. This process enables us to realize etching of materials without using any perfluorocompound (PFC) feed gases which have a high global warming potential (GWP). Etching characteristics together with diagnostics of the F atom density, CF x ( x =1–3) radical densities, electron density and temperature have been investigated as functions of pressure. As a result, it was found that etching rates of a-Si and W films were determined based on the F atom density, ion flux and ion bombardment energy. Furthermore, etching rates of a-Si and W films increased by heating the fluorocarbon species before introducing them into the plasma reactor. Thus, high rates of etching of a-Si and W films were successfully achieved by this novel etching process compared with conventional etching using ECR plasma with CF 4 /O 2 feed gases." @default.
• W2110634041 created "2016-06-24" @default.
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• W2110634041 date "2001-02-01" @default.
• W2110634041 modified "2023-10-18" @default.
• W2110634041 title "Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process" @default.
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• W2110634041 doi "https://doi.org/10.1143/jjap.40.832" @default.
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