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• W2110687628 abstract "Band alignment of TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO 2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO 2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO 2 /SiO 2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation." @default.
• W2110687628 created "2016-06-24" @default.
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• W2110687628 date "2012-05-01" @default.
• W2110687628 modified "2023-09-26" @default.
• W2110687628 title "Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack" @default.
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• W2110687628 doi "https://doi.org/10.1109/iwjt.2012.6212837" @default.
• W2110687628 hasPublicationYear "2012" @default.
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