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• W2110734085 endingPage "873" @default.
• W2110734085 startingPage "868" @default.
• W2110734085 abstract "The behavior of excess currents induced by Fowler-Nordheim electron injection stress (FN electron injection) has been investigated for 6.0-nm oxides. Excess currents are induced by FN electron injection in 6.0-nm oxides together with positive charges being induced in it. To clarify the role of hole injection in FN electron injection, the behavior of excess currents induced by substrate hot hole injection has also been investigated in 6.0-nm oxides. The leakage behavior after hot hole injection is the same as FN electron injection. The excess currents induced both by the FN electron injection and by the substrate hot hole injection are due to trap-assisted tunneling and field enhancement at the cathode due to the positive trapped charge. The charge centroid of the positive charges induced by both stresses are located 3.0 nm from the Si/SiO/sub 2/ interface which is at the center of 6.0-nm oxide. The excess currents induced by hot hole injection and FN electron injection are caused by traps in SiO/sub 2/ films produced by injected holes from the anode." @default.
• W2110734085 created "2016-06-24" @default.
• W2110734085 creator A5017855642 @default.
• W2110734085 creator A5019487254 @default.
• W2110734085 creator A5021326396 @default.
• W2110734085 creator A5037417355 @default.
• W2110734085 date "2001-05-01" @default.
• W2110734085 modified "2023-09-30" @default.
• W2110734085 title "Excess currents induced by hot hole injection and FN electron injection in thin SiO/sub 2/ films" @default.
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• W2110734085 doi "https://doi.org/10.1109/16.918233" @default.
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